NiSi (Pt) - quantitative NiSi2 semiconductor structure of Pt
In this case, we show the epitaxial growth of Pt alloy NiSi films the EDS characterization data.NiSi is used in semiconductor devices (such as MOSFET) nanoscale size of the metal structure materials.NiSi material adding Pt can be stable at high temperature metal NiSi, avoid NiSi them into low electrical conductivity2Phase.The Ni Pt soluble in NiSi, but insoluble in NiSi Pt2.
Ni and Pt by magnetron sputtering in HF (001) on Si wafer cleaning.From a single source of Pt sputter out of the amount of Pt after control, finally realizes the product of only a few atoms percentage content of Pt.Under nitrogen protection, film 30 seconds in 700 degrees under the condition of rapid annealing, produced a mixture of NiSi and NiSi2.The quality of the high density of NiSi contrast is bright, namely at high Angle of annular dark-field as (HAADF) is more bright.Because of the Pt energy edge, EELS are hard to quantify the material content of Pt.
However, in the covered with HAADF image and obtain the EDS in 7 minutes figure, Pt can be clearly seen.Traditional off 0.12 sr, 22 ° Angle on the STEM of silicon drift detector used in EDS data collection.The EDS experiment confirmed the Pt testing NiSi, EDS is the preferred solution.Using the theory of Cliff - Lorimer factor of NiSi Pt content quantitatively, the results showed that Pt atomic percentage is 2%, within the scope of error of plus or minus 1%.Specific results, see figure and quantitative extraction of line scan.The two pictures show that Pt in NiSi distribution is uniform, and the content about the at % 2 in.
